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| SPP20N65C3, SPA20N65C3 SPI20N65C3 Cool MOSTM Power Transistor Feature * New revolutionary high voltage technology * Worldwide best R DS(on) in TO 220 * Ultra low gate charge * Periodic avalanche rated * Extreme dv/dt rated * High peak current capability * Improved transconductance P-TO220-3-31 1 2 3 V DS RDS(on) ID PG-TO262 PG-TO220FP 650 0.19 20.7 PG-TO220 V A Type Package Ordering Code SPP20N65C3 SPA20N65C3 SPI20N65C3 Maximum Ratings Parameter PG-TO220 PG-TO220FP PG-TO262 Q67040-S4556 SP000216362 Q67040-S4560 Marking 20N65C3 20N65C3 20N65C3 Symbol ID Value SPP_I SPA Unit Continuous drain current TC = 25 C TC = 100 C A 20.7 13.1 20.71) 13.11) 62.1 690 1 7 20 30 Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=3.5A, VDD=50V ID puls EAS EAR IAR VGS VGS Ptot 62.1 690 1 7 20 30 A mJ Avalanche energy, repetitive tAR limited by Tjmax2) ID=7A, VDD =50V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage A V W Gate source voltage AC (f >1Hz) Power dissipation, TC = 25C 208 34.5 Operating and storage temperature Rev. 3.1 Page 1 T j , Tstg -55...+150 C 2009-12-01 SPP20N65C3, SPA20N65C3 SPI20N65C3 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope VDS = 480 V, ID = 20.7 A, T j = 125 C dv/dt 50 V/ns Thermal Characteristics Parameter Symbol min. RthJC Values typ. max. Unit Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) Soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s - 35 - 0.6 3.6 62 80 62 260 K/W RthJC_FP RthJA RthJA_FP RthJA Tsold - C Electrical Characteristics, at Tj=25C unless otherwise specified Parameter Symbol Conditions min. Values typ. max. Unit Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 650 Drain-Source avalanche breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) I DSS ID=1000A, VGS=VDS VDS=600V, V GS=0V, Tj=25C Tj=150C 730 3 0.1 0.16 0.43 0.54 3.9 V V(BR)DS VGS=0V, ID=7A 2.1 - A 1 100 100 0.19 nA Gate-source leakage current I GSS VGS=20V, V DS=0V VGS=10V, ID=13.1A Tj=25C Tj=150C Drain-source on-state resistance RDS(on) Gate input resistance RG f=1MHz, open drain Rev. 3.1 Page 2 2009-12-01 SPP20N65C3, SPA20N65C3 SPI20N65C3 Electrical Characteristics Parameter Transconductance Input capacitance Output capacitance Reverse transfer capacitance Symbol gfs Ciss Coss Crss VGS=0V, VDS=0V to 480V Conditions min. VDS2*ID*R DS(on)max, ID=13.1A VGS=0V, VDS=25V, f=1MHz Values typ. max. Unit - 17.5 2400 780 50 83 160 10 - S pF Effective output capacitance,4) Co(er) energy related Effective output capacitance,5) Co(tr) time related Turn-on delay time td(on) VDD=380V, VGS=0/13V, ID=20.7A, RG=3.6, Tj =125 - ns Rise time Turn-off delay time Fall time tr td(off) tf VDD=380V, VGS=0/13V, ID=20.7A, RG=3.6 - 5 67 4.5 100 12 Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Gate charge total Gate plateau voltage Qgd Qg V DD=480V, ID=20.7A - 11 33 87 5.5 114 - nC V DD=480V, ID=20.7A, V GS=0 to 10V V(plateau) VDD=480V, ID=20.7A V 1Limited only by maximum temperature 2Repetitve avalanche causes additional power losses that can be calculated as P =E *f. AR AV 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. 4C 5C o(er) o(tr) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Page 3 Rev. 3.1 2009-12-01 SPP20N65C3, SPA20N65C3 SPI20N65C3 Electrical Characteristics Parameter Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate of fall of reverse recovery current Typical Transient Thermal Characteristics Symbol SPP_I Rth1 Rth2 Rth3 Rth4 Rth5 Rth6 0.00769 0.015 0.029 0.114 0.136 0.059 Tj Symbol IS ISM VSD trr Qrr Irrm dirr /dt Conditions min. TC=25C Values typ. 1 500 11 70 1400 max. 20.7 62.1 1.2 800 - Unit A V GS=0V, IF=IS V R=480V, IF=IS , diF/dt=100A/s - V ns C A A/s Tj=25C Value SPA 0.00769 0.015 0.029 0.163 0.323 2.526 R th1 Unit K/W Symbol SPP_I Cth1 Cth2 Cth3 Cth4 Cth5 Cth6 R th,n T case Value SPA 0.0003763 0.001411 0.001931 0.005297 0.008453 0.412 0.0003763 0.001411 0.001931 0.005297 0.012 0.091 Unit Ws/K E xternal H eatsink P tot (t) C th1 C th2 C th,n T am b Rev. 3.1 Page 4 2009-12-01 SPP20N65C3, SPA20N65C3 SPI20N65C3 1 Power dissipation Ptot = f (TC) 240 SPP20N65C3 2 Power dissipation FullPAK Ptot = f (TC) 35 W W 200 180 25 Ptot 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 Ptot 20 15 10 5 160 C 160 0 0 20 40 60 80 100 120 TC C 160 TC 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TC=25C 10 2 4 Safe operating area FullPAK ID = f (VDS) parameter: D = 0, TC = 25C 10 2 A A 10 1 10 1 ID 10 0 ID 10 0 10 -1 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC 10 -1 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms DC 10 -2 0 10 10 1 10 2 V VDS 10 3 10 -2 0 10 10 1 10 2 10 V VDS 3 Rev. 3.1 Page 5 2009-12-01 SPP20N65C3, SPA20N65C3 SPI20N65C3 5 Transient thermal impedance FullPAK ZthJC = f (tp) parameter: D = tp/t 10 1 6 Typ. output characteristic ID = f (VDS); Tj =25C parameter: tp = 10 s, VGS 80 K/W A 20V 10V 8V 7V 10 0 60 ZthJC ID 50 6,5V 10 -1 10 -2 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 40 6V 30 5,5V 20 5V 10 10 -3 -6 10 4,5V 10 -5 10 -4 10 -3 10 -2 10 -1 1 s 10 0 0 5 10 15 V VDS 25 tp 7 Typ. output characteristic ID = f (VDS); Tj =150C parameter: tp = 10 s, VGS 45 8 Typ. drain-source on resistance RDS(on)=f(ID) parameter: Tj=150C, VGS 1.5 A 20V 10V 7V 6V 1.3 35 30 25 20 RDS(on) 1.2 1.1 1 0.9 5.5V 5V 0.8 0.7 4V 4.5V 5V 5.5V 6V 6.5V 20V ID 15 10 5 0 0 4.5V 0.6 0.5 0.4 2 4 6 8 10 12 14 16 18 20 22 V 25 0.3 0 5 10 15 20 25 30 VDS 40 A ID Rev. 3.1 Page 6 2009-12-01 SPP20N65C3, SPA20N65C3 SPI20N65C3 9 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 13.1 A, VGS = 10 V 1.1 SPP20N65C3 10 Typ. transfer characteristics ID = f ( VGS ); VDS 2 x ID x RDS(on)max parameter: tp = 10 s 80 0.9 A 25C RDS(on) 0.8 60 ID 0.7 0.6 50 40 0.5 0.4 0.3 98% 150C 30 20 0.2 0.1 0 -60 -20 20 typ 10 60 100 C 180 0 0 1 2 3 4 5 6 7 Tj 9 V VGS 11 Typ. gate charge 12 Forward characteristics of body diode IF = f (VSD) parameter: Tj , tp = 10 s 10 2 SPP20N65C3 VGS = f (Q Gate) parameter: ID = 20.7 A pulsed 16 SPP20N65C3 V A 12 VGS 8 6 IF 10 0 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 -1 0 10 0,2 VDS max 10 1 0,8 VDS max 4 2 0 0 20 40 60 80 100 nC 140 0.4 0.8 1.2 1.6 2 2.4 V 3 QGate Rev. 3.1 Page 7 VSD 2009-12-01 SPP20N65C3, SPA20N65C3 SPI20N65C3 13 Typ. switching time t = f (ID), inductive load, Tj =125C par.: VDS =380V, VGS=0/+13V, RG=3.6 10 2 td(off) 14 Typ. switching time t = f (RG ), inductive load, Tj=125C par.: VDS =380V, VGS=0/+13V, ID=20.7 A 10 3 ns td(off) ns 10 2 t t 10 1 tf td(on) td(on) 10 1 tr tr tf 10 0 0 4 8 12 16 A ID 24 10 0 0 5 10 15 20 25 30 40 RG 15 Typ. drain current slope 16 Typ. drain source voltage slope di/dt = f(RG ), inductive load, Tj = 125C par.: VDS =380V, VGS=0/+13V, ID=20.7A 5000 dv/dt = f(RG), inductive load, Tj = 125C par.: VDS =380V, VGS=0/+13V, ID=20.7A 150 A/s V/ns 4000 3500 dv/dt(off) dv/dt di/dt(on) di/dt 100 3000 2500 2000 1500 1000 500 0 0 75 50 dv/dt(on) di/dt(off) 25 5 10 15 20 25 30 40 RG 0 0 5 10 15 20 25 30 40 RG Rev. 3.1 Page 8 2009-12-01 SPP20N65C3, SPA20N65C3 SPI20N65C3 17 Typ. switching losses E = f (ID), inductive load, Tj=125C par.: VDS =380V, VGS=0/+13V, RG=3.6 0.08 18 Typ. switching losses E = f(RG), inductive load, T j=125C par.: VDS =380V, VGS=0/+13V,ID =11A 0.4 mWs *) Eon includes SPD06S60 diode commutation losses mWs *) Eon includes SPD06S60 diode commutation losses 0.06 0.3 Eoff E Eoff 0.04 E 0.05 0.25 0.2 Eon* 0.03 Eon* 0.15 0.02 0.1 0.01 0.05 0 0 3 6 9 12 15 A ID 21 0 0 5 10 15 20 25 30 40 RG 19 Avalanche SOA IAR = f (tAR) par.: Tj 150 C A 7 20 Avalanche energy EAS = f (Tj) par.: ID = 3.5 A, VDD = 50 V 700 6 5.5 mJ 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 -3 10 10 -2 Tj(Start)=25C E AS 400 300 200 100 5 500 IAR Tj(Start)=125C 10 -1 10 0 10 1 10 2 s 10 tAR 4 0 20 40 60 80 100 120 160 C Tj Rev. 3.1 Page 9 2009-12-01 SPP20N65C3, SPA20N65C3 SPI20N65C3 21 Drain-source breakdown voltage 22 Avalanche power losses PAR = f (f ) parameter: EAR =1mJ 785 SPP20N65C3 V(BR)DSS = f (Tj) 500 V 745 725 705 685 665 645 625 605 585 -60 W 400 350 300 250 200 150 100 50 04 10 5 6 V(BR)DSS -20 20 60 100 C 180 PAR 10 Hz f 10 Tj 23 Typ. capacitances C = f (VDS) parameter: VGS =0V, f=1 MHz 10 5 24 Typ. Coss stored energy Eoss=f(VDS) 14 pF 10 4 J 12 Ciss 11 E oss Coss Crss 10 9 8 7 10 3 C 10 2 6 5 4 10 1 3 2 1 10 0 0 100 200 300 400 V 600 0 0 100 200 300 400 V 600 VDS VDS Rev. 3.1 Page 10 2009-12-01 SPP20N65C3, SPA20N65C3 SPI20N65C3 Definition of diodes switching characteristics Rev. 3.1 Page 11 2009-12-01 SPP20N65C3, SPA20N65C3 SPI20N65C3 PG-TO220-3-1, PG-TO220-3-21 Rev. 3.1 Page 12 2009-12-01 SPP20N65C3, SPA20N65C3 SPI20N65C3 PG-TO220-3-31/3-111 Fully isolated package ( 2500 VAC; 1 minute ) Rev. 3.1 Page 13 2009-12-01 SPP20N65C3, SPA20N65C3 SPI20N65C3 PG-TO262-3-1, PG-TO262-3-21 (I-PAK) Rev. 3.1 Page 14 2009-12-01 SPP20N65C3, SPA20N65C3 SPI20N65C3 Published by Infineon Technologies AG 81726 Munich, Germany (c) 2007 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 3.1 Page 15 2009-12-01 |
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